Analyzing the current crowding effect induced by oxygen adsorption of amorphous InGaZnO thin film transistor by capacitance-voltage measurements

作者：Huang, Sheng Yao; Chang, Ting Chang^*; Chen, Min Chen; Jian, Fu Yen; Chen, Shih Cheng; Chen, Te Chih; Jheng, Jing Ling; Lou, Mei Jheng; Yeh , Fon Shan

来源：Solid-State Electronics, 2012, 69: 11-13.

DOI：10.1016/j.sse.2011.11.005

• InGaZnO (IGZO)
• Thin film transistors (TFTs)
• Current crowding
• Stress

The current crowding effect induced by oxygen adsorption in InGaZnO thin film transistors was investigated by capacitance-voltage measurements. During a drain-bias stress, the oxygen was adsorbed on the back channel near the drain region of InGaZnO film and formed a depletion layer, which lead to an increase in the parasitic resistance near the drain region. Moreover, the adsorbed oxygen caused the capacitance value to increase in the gate-to-source capacitance and the subthreshold capacitance to exhibit a stretch-out phenomenon in the gate-to-drain capacitance. Therefore, using the capacitance-voltage measurements supports the oxygen adsorption mechanism which induces drain current degradation after drain-bias stress.

• 出版日期2012-3
• 单位清华大学; 中山大学; 中国科学院电工研究所