Ultrasensitive Detection of Phosphate Using Ion-Imprinted Polymer Functionalized AlInN/GaN High Electron Mobility Transistors

作者：Jia, X. L.; Huang, X. Y.; Tang, Y.; Yang, L. H.; Chen, D. J.^*; Lu, H.; Zhang, R.; Zheng, Y. D.

来源：IEEE Electron Device Letters, 2016, 37(7): 913-915.

DOI：10.1109/LED.2016.2567447

• AlInN/GaN
• ion-imprinted polymer
• phosphate anion detection
• thinner barrier

In this letter, a first study on phosphate detection based on AlInN/GaN high electron mobility transistors (HEMTs) is presented. The ungated regions of GaN HEMT-based sensors were functionalized with the phosphate ion-imprinted polymer and their sensing behaviors were analyzed by detecting different concentrations of phosphate solutions. The results show that the AlInN/GaN sensor exhibits an ultrasensitive response and a specific recognition to phosphate anion and reaches a detection limit below 0.02 mg/L level, which is much lower than the limited indicator level of 0.1 mg/L for the plankton growth, while the AlInN/GaN sensor shows a higher sensitivity to phosphate anion when compared with the AlGaN/GaN sensor. This ultra-high sensitivity is attributed to the use of thinner barrier layer in the AlInN/GaN heterostructure, which makes 2-D electron gas channel more sensitive to the change of surface charge.

• 出版日期2016-7
• 单位南京大学; 昌吉学院