摘要
We propose a novel substrate-bias control scheme for an FD-SOI SRAM that suppresses inter-die variability. The proposed circuits detect inter-die threshold-voltage variation automatically, and then maximize read/write margins of memory cells to supply the substrate bias. We confirmed that a 486-kb 61 SRAM operates at 0.42 V, in which an FS corner can be compared as much as 0.14 V or more.
- 出版日期2012-4