Dislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy

作者：Nguyen Hieu T^*; Han Young; Ernst Marco; Fell Andreas; Franklin Evan; Macdonald Daniel

来源：Applied Physics Letters, 2015, 107(2): 022101.

DOI：10.1063/1.4926360

We report the detection of laser-induced damage in laser-doped layers at the surface of crystalline silicon wafers, via micron-scale photoluminescence spectroscopy. The properties of the sub-band-gap emission from the induced defects are found to match the emission characteristics of dislocations. Courtesy of the high spatial resolution of the micro-photoluminescence spectroscopy technique, micron-scale variations in the extent of damage at the edge of the laser-doped region can be detected, providing a powerful tool to study and optimize laser-doping processes for silicon photovoltaics.

• 出版日期2015-7-13