Modeling the two-dimensional emitter-base and base-collector junction capacitances of bipolar junction transistors

作者：Liou J.J.; Whittaker A.; Yuan J.S.

来源：Physica Status Solidi A-Applications and Materials Science, 1989, 113(2): K267-K271.

• Junction Capacitance

The purpose of this note is to model the two-dimensional emitter-base and base-collector junction capacitances of bipolar junction transistors. The model should have applications in bipolar integrated circuit simulation. An equivalent circuit representing the 2D resistive voltage drops in the transistor is developed from which the 2D junction voltages of the transistor can be calculated.

• 出版日期1989