摘要

The effect of dopants (N or B) on differently terminated diamond (100)-2 x 1 surfaces has in the present study been studied theoretically by using DFT (density functional theory) under periodic boundary conditions. The terminating species, X, include H, OH, O-ontop, and O-bridge. As a result of geometry optimization, the CN and CB bond lengths were calculated to be longer than for the situation with saturated binding conditions (i.e., the situation where N (or B) are binding to three other atoms, instead of four). Moreover, the XCsurface-dopant angles were observed to decrease for the N-doped and increase for the B-doped senarios. In addition, the atomic charges and bond populations for the region surrounding the dopants were also carefully analyzed in order to compare the surface stabilization situations for non-, N- and B-doped diamond surfaces. For the H-terminated diamond surfaces, the CH bonds became weakened when substituationally doped with either N or B. For the O-terminated diamond surfaces (i.e., both O-ontop, and O-bridge), the results showed opposite trends by strengthening (or weakening) the CO bonds for the N- (or B-) doped system, respectivly. The adsorption energies for the various terminating species were observed to decrease when going from a nondoped to an N-doped situation and finally over to a B-doped situation. This is a result that strongly correlates with the calculated CsurfaceX (X = H, OH, O-ontop, O-bridge) bond lengths. In addition, the effect of surface termination on the diamond surface stabilization energy, was observed to be in the following order: O-bridge > O-top > H > OH. This result was valid for both non-, N- and B-doped diamond surfaces. The calculated spin density calculations indicated a local distribution of the unpaired electron in the N- and B-doped systems, respectively. This is a result that showed a strong correlation to the bond lengths surrounding the dopants and to the calculated adsorption energies for the terminating species, X. Moreover, the surface electronic structures (i.e., surface states) for the N- and B-doped systems were calculated and visualized by performing pDOS calculations. The results showed a shift of the Fermi levels for the N- and B-doped situations. As expected, the Fermi level was shifted toward the conduction band for the N-doped surfaces and toward the valence band for the B-doped systems. In addition, the pDOS spectra for the O-ontop-termination showed extra states around the Fermi level, which were the result induced by the radical nature of this type of termination species.

  • 出版日期2015-2-5