摘要
The quasi-static approximation, which assumes that free-carrier propagation delay in the semiconductor device is zero, is often used in device modeling. Consequently, the quasi-static model is adequate only for low-frequency excitations for which free-carrier propagation delay is very small compared to the variation of the excitations. This paper develops a non-quasi-static model suitable for metal-semiconductor junction diodes subjected to small-signal excitation. We show that the predictions of the non-quasi-static model agree more favourably with experimental data taken from AlSi diodes than that of the quasi-static model, particularly when the frequency of the excitation is high.
- 出版日期1990-12