A non-quasi-static small-signal model for metal-semiconductor junction diodes

作者:J.J. Liou; K. Lee; S.M. Knapp; K.B. Sundaram; J.S. Yuan; D.C. Malocha; M. Belkerdid
来源:Solid-State Electronics, 1990, 33(12): 1629-1632.

摘要


The quasi-static approximation, which assumes that free-carrier propagation delay in the semiconductor device is zero, is often used in device modeling. Consequently, the quasi-static model is adequate only for low-frequency excitations for which free-carrier propagation delay is very small compared to the variation of the excitations. This paper develops a non-quasi-static model suitable for metal-semiconductor junction diodes subjected to small-signal excitation. We show that the predictions of the non-quasi-static model agree more favourably with experimental data taken from AlSi diodes than that of the quasi-static model, particularly when the frequency of the excitation is high.

  • 出版日期1990-12

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