Superstructured ordering in AlxGa1-xAs and GaxIn1-xP alloys

作者:Seredin P V*; Domashevskaya P; Arsentyev I N; Vinokurov D A; Stankevich A L; Prutskij T
来源:Semiconductors, 2013, 47(1): 1-6.
DOI:10.1134/S106378261301020X

摘要

Epitaxial heterostructures produced on the basis of Al (x) Ga1 - x As and Ga (x) In1 - x P ternary alloys by metal-organic chemical vapor deposition are studied. The composition parameter x of the alloys was similar to 0.50. By X-ray diffraction studies, scanning electron microscopy, atomic force microscopy, and photoluminescence spectroscopy, it is shown that superstructured ordered phases with the stoichiometry composition III1 - eta III1 + eta V2 can be formed. As a consequence of this effect, not only does the cubic crystal symmetry change to the tetragonal type in the new compound, but also the optical properties become different from those of disordered alloy with the same composition.

  • 出版日期2013-1

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