A Direct Z‐Scheme Van Der Waals Heterojunction (WO3·H2O/g‐C3N4) for High Efficient Overall Water Splitting under Visible‐Light

作者：Yurong, Yang; Min, Qiu; Liu, Li; Yanmei, Pi; Guomin, Yan; Lei, Yang

来源：Solar RRL, 2018, 2(9): 1800148.

DOI：10.1002/solr.201800148

<jats:sec><jats:label /><jats:p>Achieving overall water splitting is crucial for the effective application of recycling solar energy. Here, we design and construct a direct Z‐scheme van der Waals heterojunction composed by ultrathin WO<jats:sub>3</jats:sub>·H<jats:sub>2</jats:sub>O and g‐C<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> nanosheets to achieve efficient overall water splitting without adding any sacrificial agents. This WO<jats:sub>3</jats:sub>·H<jats:sub>2</jats:sub>O/g‐C<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> system can efficiently transport the electrons, which leading to a considerable improvement in the photocatalytic performance. Due to the suitable band edge potentials for H<jats:sub>2</jats:sub>, O<jats:sub>2</jats:sub> evolution, and remarkable charge transfer, the direct WO<jats:sub>3</jats:sub>·H<jats:sub>2</jats:sub>O/g‐C<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> Z‐scheme system exhibits prominent photocatalytic activity for both H<jats:sub>2</jats:sub> and O<jats:sub>2</jats:sub> production under visible‐light illumination, the H<jats:sub>2</jats:sub>, O<jats:sub>2</jats:sub> production rate up to 482 and 232 µmol g<jats:sup>−1</jats:sup> h<jats:sup>−1</jats:sup> respectively, which is greatly higher than the H<jats:sub>2</jats:sub> evolution of g‐C<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> nanosheets (109 µmol h<jats:sup>−1</jats:sup> g<jats:sup>−1</jats:sup>) and the O<jats:sub>2</jats:sub> evolution of WO<jats:sub>3</jats:sub>·H<jats:sub>2</jats:sub>O nanosheets (57<jats:italic> </jats:italic>µmol h<jats:sup>−1</jats:sup> g<jats:sup>−1</jats:sup>) under the same condition. The measured quantum efficiency of the WO<jats:sub>3</jats:sub>·H<jats:sub>2</jats:sub>O/g‐C<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> heterojunction reaches 6.2% at 420 nm.</jats:p></jats:sec>

• 出版日期2018-9
• 单位哈尔滨工程大学