4H-SiC ultraviolet avalanche photodetectors with low breakdown voltage and high gain

作者：Zhu, Huili; Chen, Xiaping; Cai, Jiafa; Wu, Zhengyun^*

来源：Solid-State Electronics, 2009, 53(1): 7-10.

DOI：10.1016/j.sse.2008.09.002

• 4H-SiC
• Ultraviolet
• Avalanche photodetectors (APDs)

The separate absorption and multiplication (SAM) 4H-SiC ultraviolet (UV) avalanche photodetectors (APDs) have been designed, fabricated and characterized. A gain higher than 1.8 x 10(4) was achieved at 90% breakdown voltage of similar to 55 V. At 0 V, the peak absolute responsivity was estimated to be larger than 0.078 A/W at 270 nm, corresponding to a peak external quantum efficiency of over 35.8%. The long-wavelength cutoff was about 380 nm. In addition, the UV-to-visible rejection ratio of around three orders of magnitude was extracted from the spectra response. When the reverse bias was larger than 35 V, the spectral responsivity enhanced distinctly. At the reverse bias of 42 V, the peak responsivity increased to 0.203 A/W at 270 nm, corresponding to a maximum external quantum efficiency of similar to 93%, which showed a distinct avalanche behavior. Furthermore, the ideality factor around 1.65 and the spectral detectivity about 3.1 X 10(13) cm Hz(1/2) W-1 were estimated. in conclusion, the 4H-SiC APD have excellent performance for UV detection.

• 出版日期2009-1
• 单位厦门大学