A K-Band CMOS Amplifier With Temperature Compensation for Gain Variation Reduction

作者：Qi, Quanwen; Chen, Zhiming^*

来源：IEEE Microwave and Wireless Components Letters, 2018, 28(2): 150-152.

DOI：10.1109/LMWC.2017.2786658

• Amplifier
• CMOS
• gain variation
• K-band
• temperature compensation

This letter proposes a new temperature compensation method that automatically generates the adaptive bias voltage for a microwave amplifier to obtain nearly constant gain over a wide temperature range. The method uses a two-segment polyline to linearly fit the ideal bias curve, and each segment is realized through digitally controlled superposition of proportional-to-absolute temperature and constant-with-temperature currents. By applying the temperature compensation technique, the measured gain of a two-stage K-band amplifier fabricated in 90-nm CMOS technology varies by only 1.2 dB across an ultra-wide temperature range from -45 degrees C to + 125 degrees C, corresponding to 0.35 dB/100 degrees C per stage, compared to 4.6 dB without any compensation. The chip occupies an area of 0.5 mm(2) and consumes 25.2 mW at 25 degrees C from a 1.2-V supply.

• 出版日期2018-2
• 单位北京理工大学