Ab-Initio Simulation of van der Waals MoTe2-SnS2 Heterotunneling FETs for Low-Power Electronics

作者：Szabo Aron^*; Koester Steven J; Luisier Mathieu

来源：IEEE Electron Device Letters, 2015, 36(5): 514-516.

DOI：10.1109/LED.2015.2409212

• Device simulation
• tunnel-FET

Band-to-band tunneling field-effect transistors (TFETs) made of a vertical heterojunction of single-layer MoTe2 and SnS2 are investigated by means of 3-D, full-band, atomistic quantum-transport simulations relying on a first-principles basis. At a supply voltage V-dd = 0.4 V and OFF-current I-OFF = 10(-6) mu A/mu m, ON-state currents >75 mu A/mu m are reported for both n- and p-type logic switches. Our findings indicate that metal-dichalcogenide heterojunction TFETs represent a viable option in low-power electronics.

• 出版日期2015-5