Annealing effect of the 6H-SiC semiconductor detector for alpha particles

作者：Ha J H; Kang S M; Park S H; Kim H S; Cho Y H; Lee J H; Lee N H; Kim J B; Kim Y K^*

来源：Radiation Measurements, 2008, 43(2-6): 1140-1143.

DOI：10.1016/j.radmeas.2007.11.076

• silicon carbide (SiC)
• radiation detectors
• semiconductor detectors
• annealing effect
• alpha response

Alpha-particle detectors based on 6H-SiC semiconductor were fabricated and their electrical and radiation performances were measured. Detector structure was Au/Ni/6H-SiC/Ni/Au multi-layer structure. The current-voltage characteristics of the SiC detectors were measured and the radiation response was evaluated by Pu-238 with 5.5 MeV alpha particles at room temperature in air. The 6H-SiC detectors were annealed by a rapid temperature annealing (RTA) device at 100 and 300 degrees C for 10 min. The Schottky barrier heights (SBHs) of detectors were determined according to annealing processes. The SBHs of 6H-SiC detector were increased as annealing temperature increases. From I-V measurement leakage currents at a biased voltage were decreased as annealing temperature increased. As a result, Au/Ni/6H-SiC type of alpha-particle semiconductor detector showed good performance after thermal treatment up to 300 degrees C.

• 出版日期2008-6