Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs

作者：Cirne K^*; Silveira M A G; Santos R B B; Gimenez S P; Barbosa M D L; Tabacniks M H; Added N; Medina N H; De Melo W R; Seixas L E Jr; De Lima J A

来源：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2012, 273: 80-82.

DOI：10.1016/j.nimb.2011.07.044

• Total Ionizing Dose (TID)
• External proton beam
• Circular-Gate MOSFET
• Rectangular-Gate MOSFET
• Integrated circuits
• Radiation effects
• Radiation hardening

The study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results of radiation effects in MOSFETs that were exposed to 3.2 Grad radiation dose produced by a 2.6-MeV proton beam. The focus of this work was to electrically characterize a Rectangular-Gate MOSFET (RGT) and a Circular-Gate MOSFET (CGT), manufactured with the On Semiconductor 0.5 mu m standard CMOS fabrication process and to verify a suitable geometry for space applications. During the experiment, I-DS x V-GS curves were measured. After irradiation, the RGT off-state current (I-OFF) increased approximately two orders of magnitude reaching practically the same value of the I-OFF in the CGT, which only doubled its value.

• 出版日期2012-2-15