Subsurface microscopy of interconnect layers of an integrated circuit

作者:Koklu F Hakan; Unlu M Selim*
来源:Optics Letters, 2010, 35(2): 184-186.
DOI:10.1364/ol.35.000184

摘要

We apply the NA-increasing lens technique to confocal and wide-field backside microscopy of integrated circuits. We demonstrate 325 nm (lambda(0)/4) lateral spatial resolution while imaging metal structures located inside the interconnect layer of an integrated circuit. Vectorial field calculations are presented justifying our findings.

  • 出版日期2010-1-15