Atomistic simulation of damage accumulation and amorphization in Ge

作者：Gomez Selles Jose L^*; Claverie Alain; Sklenard Benoit; Benistant Francis; Martin Bragado Ignacio

来源：Journal of Applied Physics, 2015, 117(5): 055703.

DOI：10.1063/1.4907211

Damage accumulation and amorphization mechanisms by means of ion implantation in Ge are studied using Kinetic Monte Carlo and Binary Collision Approximation techniques. Such mechanisms are investigated through different stages of damage accumulation taking place in the implantation process: from point defect generation and cluster formation up to full amorphization of Ge layers. We propose a damage concentration amorphization threshold for Ge of similar to 1.3 x 10(22) cm(-3) which is independent on the implantation conditions. Recombination energy barriers depending on amorphous pocket sizes are provided. This leads to an explanation of the reported distinct behavior of the damage generated by different ions. We have also observed that the dissolution of clusters plays an important role for relatively high temperatures and fluences. The model is able to explain and predict different damage generation regimes, amount of generated damage, and extension of amorphous layers in Ge for different ions and implantation conditions.

• 出版日期2015-2-7
• 单位中国地震局