Numerical and experimental analysis of EMI effects on circuits with MESFET devices

作者：Tsai Han Chang^*

来源：Microelectronics Reliability, 2008, 48(4): 537-546.

DOI：10.1016/j.microrel.2007.09.003

This study develops theoretical formulae to model the time domain and frequency domain characteristics of the noise spectrum of a MESFET device induced by varying EMI conditions. The theoretical results are then compared with the experimental measurements. The experimental and numerical results reveal that the magnitude of the EMI-induced noise is related to the pulse height, the output load, the parasitic capacitance, the interference frequency and the interference amplitude. It is shown that a higher interference amplitude or frequency increases the harmonic noise. The theoretical method presented in this paper provides a convenient means of evaluating the EMI effects and signal-to-noise ratio (SNR) of MESFET and similar wavelength devices.

• 出版日期2008-4