Dimensional crossover and weak localization in a 90 nm n-GaAs thin film

作者：Gilbertson A M^*; Newaz A K M; Chang Woo Jin; Bashir R; Solin S A; Cohen L F

来源：Applied Physics Letters, 2009, 95(1): 012113.

DOI：10.1063/1.3176968

We report on the magnetotransport in a 90 nm thick n-type GaAs epitaxial thin film in the weak localization (WL) regime. Low temperature (T <= 50 K) magnetotransport data are fit with WL theory, from which the phase coherence time, tau(phi) proportional to T(-p) (p = 1.22 +/- 0.01), are extracted. We conclude that the dominant dephasing mechanism at these temperatures is electron-electron (e-e) scattering in the Nyquist limit. Evidence of a crossover from two-dimensional to three-dimensional behavior with respect to both coherent transport (WL) and e-e interactions is observed in the temperature dependence of the zero-field conductivity and tau(phi), respectively.

• 出版日期2009-7-6