New Read Schemes Using Boosted Channel Potential of Adjacent Bit-Line Strings in NAND Flash Memory

作者：Joe Sung Min^*; Jeong Min Kyu; Kang Myounggon; Han Kyoung Rok; Park Sung Kye; Lee Jong Ho

来源：IEEE Electron Device Letters, 2012, 33(8): 1198-1200.

DOI：10.1109/LED.2012.2202209

• Background pattern dependence (BPD)
• interference
• NAND Flash memory
• on-cell string current
• read disturbance
• self-boosting

New schemes of read operation using boosted channel potential of adjacent bit-line (BL) strings are proposed for improving ON-state current of a cell string in NAND Flash memory. The channel resistance of pass cells in a cell string under read operation is decreased by the electric field due to the boosted channel potential of adjacent BL strings, which increases ON-state current of the cell string. Proposed schemes give much smaller read disturbance compared with conventional ones because the boosted channel potential of unselected BL strings prevents soft programming in cells of the unselected BL strings. It was also shown that new read operation of #2 scheme leads to suppress the background pattern dependence by similar to 58%, as compared with the conventional read operation scheme.