A doping-free carbon nanotube CMOS inverter-based bipolar diode and ambipolar transistor

作者：Wang Sheng; Zhang Zhiyong; Ding Li; Liang Xuelei^*; Shen Jun; Xu Huilong; Chen Qing; Cul RongLi; Li Yan; Peng Lian Mao

来源：Advanced Materials, 2008, 20(17): 3258-+.

DOI：10.1002/adma.200703210

A barrier-free bipolar diode (BFBD) and an ambipolar field-effect transistor (FET) are fabricated based on a doping-free carbon nanotube (CNT) CMOS inverter. The basic CNT device unit consists of two Pd and two Sc electrodes deposited side-by-side on a single CNT, and can be used as an n-FET, p-FET, CMOS inverter, and high-performance ambipolar FET and BFBD in which both electrons and holes contribute effectively to the forward current.

• 出版日期2008-9-3
• 单位北京大学