Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model

作者：Rong Xi-Ming; Chen Jun; Li Jing-Tian; Zhuang Jun; Ning Xi-Jing^*

来源：Chinese Physics B, 2015, 24(12): 128706.

DOI：10.1088/1674-1056/24/12/128706

• condensing potential model
• Ni-Al alloy
• crystallization ability
• pulsed laser deposition

Recently, a condensing potential model was developed to evaluate the crystallization ability of bulk materials [Ye X X, Ming C, Hu Y C and Ning X J 2009 J. Chem. Phys. 130 164711 and Peng K, Ming C, Ye X X, Zhang W X, Zhuang J and Ning X J 2011 Chem. Phys. Lett. 501 330], showing that the best temperature for single crystal growth is about 0.6T(m), where T-m is the melting temperature, and for Ni-Al alloy, more than 6 wt% of Al-doping will badly reduce the crystallization ability. In order to verify these predictions, we fabricated Ni-Al films with different concentrations of Al on Si substrates at room temperature by pulsed laser deposition, and post-annealed the films at 833, 933, 1033 ( similar to 0.6Tm), 1133, and 1233 K in vacuum furnace, respectively. The x-ray diffraction spectra show that annealing at 0.6T(m) is indeed best for larger crystal grain formation, and the film crystallization ability remarkably declines with more than 6-wt% Al doping.

• 出版日期2015-12
• 单位复旦大学