Preparation and characterizations of visible light-responsive (Ag-In-Zn)S thin-film electrode by chemical bath deposition

作者：Wu Ching Chen; Cheng Kong Wei; Chang Wen Sheng; Lee Tai Chou^*

来源：Journal of the Taiwan Institute of Chemical Engineers, 2009, 40(2): 180-187.

DOI：10.1016/j.jtice.2008.09.001

• Semiconductors
• Chemical synthesis
• X-ray diffraction
• Optical properties
• Electrochemical properties

The thin-film form of (Ag-In-Zn)S quaternary semiconductor was prepared from acidic aqueous solutions. A low temperature and low cost chemical deposition method is presented. Grazing incidence X-ray diffraction, UV-visible spectroscopy, scanning electron microscopy, and X-ray photoelectron Spectroscopy characterized the crystal phases, optical absorptions, surface morphologies, and compositions of the films. Samples are polycrystalline composed of ZnS/AgInS(2)/AgIn(5)S(8) crystal phases. The thickness and optical absorption edge, depending on dipping numbers, lie between 0.58 and 1.29 mu m and 2 and 3.1 eV, respectively. Photoresponse measurements were recorded by a scanning potentiostat in a standard three-electrode electrochemical setup under a 300 W Xe lamp illumination with the intensity of 100 mW/cm(2). For the sample dipped in the chemical bath for three times (Sample C), the photocurrent density of 6.275 mA/cm(2) was obtained in contact with K(2)SO(3) and Na(2)S aqueous electrolyte with in applied potential of 1 V vs. SCE reference electrode. The corresponding maximum photon-to-current efficiency is 55% at lambda = 500 nm.

• 出版日期2009-3
• 单位长春大学