Atomic layer deposition of lithium nitride and carbonate using lithium silylamide

作者：Ostreng Erik^*; Vajeeston Ponniah; Nilsen Ola; Fjellvag Helmer

来源：RSC Advances, 2012, 2(15): 6315-6322.

DOI：10.1039/c2ra20731a

Lithium silylamide, LiN(SiMe3)(2), has been explored as precursor for the successful deposition of thin films of lithium nitride, Li3N, and of lithium carbonate, Li2CO3, by atomic layer deposition. Deposition of Li2CO3 has been used as a tool in the method development as the compound is stable in air, contrary to Li3N. Self limiting growth was demonstrated for both Li3N and Li2CO3. The crystalline state of Li3N depends on the deposition conditions, and varies from amorphous to a phase mixture of alpha-Li3N and beta-Li3N. The growth rate of Li3N is 0.95 angstrom cycle(-1). The Li2CO3 is well crystalline and highly oriented with (002) parallel to the substrate as deposited, and has, according to XPS, a low content of silicon at deposition temperatures between 89 and 332 degrees C. The growth rate of Li2CO3 is 0.35 angstrom cycle(-1). A geometrical model has been applied to rationalise the observed growth rates. This is the first example of deposition of nitrides using silylamides, and the first route towards lithium nitride by ALD.

• 出版日期2012