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摘要
An electron mobility model for AlGaN/GaN heterostructures taking both the lattice temperature and electric field into account is proposed. The numerical device simulation of an ungated Al0.25Ga0.75N/GaN HEMT structure on a 4H-SiC substrate is compared to measured electrical characteristics. Mobility model parameters are extracted by comparing isothermal numerical simulations with microwave (6 GHz) large-signal measurements. The extracted model was used in static simulations, showing good agreement with measurements.
- 出版日期2012-12
