Grain-boundary evolution in a pentacene monolayer

作者:Zhang Jian*; Rabe Juergen P; Koch Norbert
来源:Advanced Materials, 2008, 20(17): 3254-+.
DOI:10.1002/adma.200703066

摘要

Grain boundaries within single pentacene topographical islands on SiO2 are directly observed (see figure), and these intraisland grain boundaries form at very early stages of pentacene film growth (starting at ca. 0.05 monolayer). Consequently, charge-carrier mobility values from studies on single topographical islands may still include contributions from grain boundaries.

  • 出版日期2008-9-3