High Brightness, Large Scale GaN Based Light-Emitting Diode Grown on 8-Inch Si Substrate

作者：Lee Seung Jae^*; Song Jae Chul; Park Hyung Jo; Park Jun Beom; Jeon Seong Ran; Lee Cheul Ro; Jeon Dae Woo; Baek Jong Hyeob

来源：ECS Journal of Solid State Science and Technology, 2015, 4(8): Q92-Q95.

DOI：10.1149/2.0151508jss

A crack-free, uniform InGaN/GaN light-emitting diode (LED) structure with strain-engineered buffer layer was grown on an 8-inch diameter Si(111) substrate. The full width at half maximum (FWHM) of (002) and (102)omega-scan is 280 and 420 arcsec, respectively. For LED on 8-inch Si, multiple quantum well (MQW) photoluminescence (PL) wavelength uniformity of 0.55% (2.4 nm) has been achieved by using proper curvature engineered wafer carrier. We demonstrated high brightness 1x1 mm(2) LED devices utilizing vertical chip process then evaluated their device properties. The electro-optical characteristics of the fabricated vertical LED (VLED) shows around 1 W light output power at 1 A injection current with operating voltage of 4.0 V.

• 出版日期2015