Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone

作者：Cheng Lanxia; Qin Xiaoye; Lucero Antonio T; Azcatl Angelica; Huang Jie; Wallace Robert M; Cho Kyeongjae; Kim Jiyoung^*

来源：ACS Applied Materials & Interfaces, 2014, 6(15): 11834-11838.

DOI：10.1021/am5032105

• atomic layer deposition
• high-k dielectric
• ozone
• MoS2

We present an Al2O3 dielectric layer on molybdenum disulfide (MoS2), deposited using atomic layer deposition (ALD) with ozone/trimethylaluminum (TMA) and water/TMA as precursors. The results of atomic force microscopy and low-energy ion scattering spectroscopy show that using TMA and ozone as precursors leads to the formation of uniform Al2O3 layers, in contrast to the incomplete coverage we observe when using TMA/H2O as precursors. Our Raman and X-ray photoelectron spectroscopy measurements indicate minimal variations in the MoS2 structure after ozone treatment at 200 degrees C, suggesting its excellent chemical resistance to ozone.

• 出版日期2014-8-13