A Simple Gate-Dielectric Fabrication Process for AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

作者：Liu Han Yin^*; Chou Bo Yi; Hsu Wei Chou; Lee Ching Sung; Ho Chiu Sheng

来源：IEEE Electron Device Letters, 2012, 33(7): 997-999.

DOI：10.1109/LED.2012.2197370

• AlGaN/GaN
• gate dielectric
• H2O2 oxidation
• metal-oxide-semiconductor (MOS) high-electron-mobility transistor (HEMT) (MOS-HEMT)

This letter reports a simple processing method for fabricating metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) by using hydrogen peroxide (H2O2) oxidation technique. Aluminum oxide (AlOx) was formed on the surface of the AlGaN barrier as the gate dielectric of the MOS-gate structure. By using the capacitance-voltage measurement, the dielectric constant (kappa) of AlOx was determined to be 9.2. The present MOS-HEMT has demonstrated enhanced saturation drain current density at V-GS = 0 V(I-DSS0) of 552.3 mA/mm, maximum extrinsic transconductance (g(m, max)) of 136 mS/mm, wide gate voltage swing of 2.9 V, and two-terminal gate-drain breakdown/turn-on voltages (BVGD/V-on) of -132.2/1.82 V.

• 出版日期2012-7