Analysis of current transport properties in nonpolar a-plane ZnO-based Schottky diodes

作者：Kim Hogyoung; Kim Haeri; Kim Dong Wook

来源：Journal of the Korean Physical Society, 2014, 65(5): 751-756.

DOI：10.3938/jkps.65.751

• Transport properties
• Ideality factors
• Density of localized states

Using current-voltage (I-V) measurements, we investigated the temperature-dependent transport properties in Ag/nonpolar a-plane ZnO Schottky diodes. The bias-dependent ideality factors were altered by the different temperatures and showed a hump at lower temperatures. The series resistance of the diode depended on the temperatures, which was related to the number of free carriers contributing to the series resistance. For high forward bias, the slope m obtained from the lnI-lnV curves decreased with increasing temperature, assuring the space-charge-limited-current (SCLC) model controlled by an exponential distribution of traps. The reverse-biased current transport was associated with the Schottky effect, with a thermally-assisted tunneling for lower voltages and the Poole-Frenkel effect for higher voltages. The density of localized states (N (t) ) was obtained by applying the theory of SCLC transport, which yielded a N (t) value of 8.32 x 10(11) eV(-1)cm(-3).

• 出版日期2014-9