摘要

In this paper a novel lateral block size characterization method based on X-ray diffractometry (XRD) is presented. The developed method based on scans of plans perpendicular to the surface visible from the edge of the sample and subconsequent numerical analysis based on Scherrer equation. In presented investigations as a reference sample bulk GaN substrate fabricated by AMMONO Ltd. was used. The GaN layers deposited on sapphire substrate were investigated as a case of study. Moreover, a method of analyzing the magnitude of the tilt and twist mosaicity based on the scans of rocking curves and reciprocal lattice maps (RLM) from the edge of sample is presented. As an example for this methodology highly mosaicited SiC crystal was used. Presented approach allows to directly determine the value of the angular deviation of mosaicity in a direction perpendicular and parallel to the sample surface.

  • 出版日期2016-4