摘要

In this letter, a wideband low noise amplifier (LNA) operating at 15 GHz is proposed.The circuit is designed with a TSMC 0.18-mu m RF CMOS process. To obtain high transconductance with low power consumption, two types of inverters are used. The proposed LNA is expected to reduce the size of chip about 7080% by using only the single-spiral inductor. The measured voltage gain is 14.415.5 dB and noise figure (NF) is 4.35.0 dB from 15 GHz. The total power consumption of the proposed LNA is 9.8 mW from a 1.4 V supply voltage and chip area occupies only 0.5 x 0.5 mm2.

  • 出版日期2012-10