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摘要
The directed self-assembly (DSA) technology of block copolymers is a candidate for next-generation lithography. The computation model of this lithography can assist in overcoming its challenges. In this paper, a template-assisted self-assembly (DSA graphoepitaxy) is modeled and simulated in a molecular scale to reduce the process complexity. For a full simulation, the template fabrication and DSA process are modeled and simulated to evaluate the impact of the process parameters on the pattern profile. Simulation results similar to the experimental results allow the prediction of the self-assembled patterns of the confined block polymers.
- 出版日期2012-4
