Resonant-cavity-enhanced p-i-n photodiode with a broad quantum-efficiency spectrum by use of an anomalous-dispersion mirror

作者：Chen CH^*; Tetz K; Fainman Y

来源：Applied Optics, 2005, 44(29): 6131-6140.

DOI：10.1364/AO.44.006131

A resonant-cavity-enhanced photodiode with broad filter transmittance and high quantum efficiency was numerically designed and analyzed, fabricated, and validated experimentally. We show theoretically that the quantum-efficiency spectrum broadens because of anomalous dispersion of the reflection phase of a mirror in the device and describe conditions that allow maximal flatness of the transmitted spectrum to be achieved. To demonstrate the concepts we design, fabricate, and characterize a backilluminated In0.47Ga0.53As-based p-i-n photodiode upon a InP substrate. Experimental measurements of the fabricated devices demonstrate a peak quantum efficiency of 0.80 at 1550 nm and a FWHM of transmittance of 35.96 nm.

• 出版日期2005-10-10