Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions

作者：Wang Jen Yi; Lee Chun Yu; Chen Yung Ting; Chen Chung Tse; Chen Yung Ling; Lin Ching Fuh; Chen Yang Fang^*

来源：Applied Physics Letters, 2009, 95(13): 131117.

DOI：10.1063/1.3232244

Double side light emission devices based on p-NiO/n-ZnO nanowire heterojunctions have been fabricated on indium tin oxide substrate by radio frequency magnetron sputtering combined with hydrothermal process. According to the energy band alignment, the detected broad visible and narrow ultraviolet electroluminescence arise from defect and band edge transitions in ZnO nanowires, respectively. The unique property of the double side emission is due to the nature of the large band gap of NiO film. It provides a good opportunity for the emission of a light emitting device with different colors on the top and back sides, simultaneously.

• 出版日期2009-9-28