Anomalous Change of Transport Characteristics of Graphite Planar-Type Micro-structures Fabricated by Focused Ion Beam

作者：Gunasekaran V; Saini S; Kim G S; Kim S J^*

来源：Journal of Superconductivity and Novel Magnetism, 2010, 23(6): 1193-1196.

DOI：10.1007/s10948-010-0750-8

• Planar-type structures
• Focused ion beam
• Anomalous transition
• Nonlinear characteristics

We report the observation of an anomalous change of transport characteristics of planar-type microstructures (along ab-plane and c-axis) fabricated on thin graphite layer using a three-dimensional focused-ion-beam (FIB) etching technique. We have fabricated several in-plane area of sizes of 6 mu m x 6 mu m, 6 mu m x 4 mu m and 6 mu m x 2 mu m planar-type microstructures/patterns on thin graphite layer using FIB. The c-axis stack with the height of several nanometers was also fabricated. The transport characteristics were studied for these structures. We have observed a peculiar anomalous transition from ohmic behavior to curve-like nonlinear characteristics below 110 K from current (I)-voltage (V) curves for ab-plane and c-axis stack. Clear nonlinear characteristics have been observed at 25 K. Resistance versus temperature (R-T) and I-V characteristics of the ab-plane and c-axis stack strongly resemble this anomalous-transition behavior. These results show the superiority of graphite-microstructures for future graphite-based nonlinear electronic devices.

• 出版日期2010-8