Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film

作者：Yang Min Kyu; Ju Hyunsu; Kim Gun Hwan; Lee Jeon Kook; Ryu Han Cheol^*

来源：Scientific Reports, 2015, 5(1): 14053.

DOI：10.1038/srep14053

A Ta/TaOx/Pt stacked capacitor-like device for resistive switching was fabricated and examined. The tested device demonstrated stable resistive switching characteristics including uniform distribution of resistive switching operational parameters, highly promising endurance, and retention properties. To reveal the resistive switching mechanism of the device, micro structure analysis using high-resolution transmission electron microscope (HR-TEM) was performed. From the observation results, two different phases of Ta-metal clusters of cubic alpha-Ta and tetragonal beta-Ta were founded in the amorphous TaOx mother-matrix after the device was switched from high resistance state (HRS) to low resistance state (LRS) by externally applied voltage bias. The observed Ta metal clusters unveiled the origin of the electric conduction paths in the TaOx thin film at the LRS.

• 出版日期2015-9-14