ESD protection device with dual-polarity conduction and high blocking voltage realized in CMOS process

作者：Luo Sirui; Salcedo Javier A; Hajjar Jean Jacques; Zhou Yuanzhong; Liou Juin J

来源：IEEE Electron Device Letters, 2014, 35(4): 437-439.

DOI：10.1109/LED.2014.2305634

• Analog-to-digital data acquisition
• Blocking voltage
• Communication interface
• Electrostatic discharge protection device (ESD)
• ESD protection devices
• Experimental characterization
• Operating voltage range
• Trigger currents

Electrostatic discharge (ESD) protection devices fabricated in a low-voltage CMOS process for communication interface applications typically provide relatively small blocking voltage, thus limiting the interface operating voltage range for which the ESD device can be used. This letter introduces a CMOS-based silicon controlled rectifier with a large blocking voltage beyond ±20 V and a high trigger current. Such a high blocking voltage is achieved by selectively defining native-buffer regions in critical blocking junctions of the device. Experimental characterization of the ESD robustness and standing operation are presented to validate the new device for low capacitance, high-voltage-tolerant communication interface ESD protection applications.

• 出版日期2014
• 单位University of central Florida