摘要
The electron and hole g-factors in individual InAs/GaAs quantum rings were evaluated using the bistable responses of the optically induced nuclear spin polarization. Although the dispersions of the hole and exciton g-factors were larger than that of the electron g-factor in the individual quantum rings, a strong correlation between the hole and exciton g-factors was clearly observed. Part of the dispersion of the measured hole gfactor was explained well by considering the effect of strain-induced valence band mixing.
- 出版日期2014-6
- 单位RIKEN