A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique

作者：Lin Chi Hsien^*; Chang Hong Yeh

来源：IEEE Microwave and Wireless Components Letters, 2010, 20(9): 507-509.

DOI：10.1109/LMWC.2010.2056675

• Enhancement/depletion pseudomorphic high electron mobility transistor (E/D-PHEMT)
• high efficiency
• power amplifier (PA)
• reactance compensation

This letter presents a high efficiency broadband fully integrated class-E power amplifier (PA) using a 0.5 mu m enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed PA is based on a class-E topology with a reactance compensation technique. To achieve high efficiency and broad bandwidth, the reactance compensation component is employed in the load network of the class-E PA. From 1.5 to 3.8 GHz, this circuit demonstrates a power added efficiency (PAE) of 62% and an output 1 dB compression point (P(1 dB)) of higher than 27 dBm.

• 出版日期2010-9
• 单位中央民族大学