A novel guard method of through-silicon-via (TSV)

作者：Wang, Fengjuan^*; Huang, Jia; Yu, Ningmei

来源：IEICE Electronics Express, 2018, 15(11): 20180421.

DOI：10.1587/elex.15.20180421

• through-silicon-via (TSV)
• guard method
• PN junction
• three-dimensional integrated circuit (3D IC)

An effective method of improving signal integrity of through-silicon-via (TSV) is proposed by adding a PN junction around conventional TSV. And the equivalent electrical model of the TSV with PN junction is proposed, based on which the S-parameters are obtained by ADS software and compared those of conventional TSV. It is shown that the TSV with PN junction offers more superior signal integrity than conventional TSV. Meanwhile, the S-parameters are validated by employing HFSS, and the results from ADS and HFSS show well agreements. Finally, a feasible fabrication process is given.

• 出版日期2018-6-10
• 单位西安理工大学