Peltier effect on CoSn3 growth in Sn/Co/Sn couples with different substrate lengths

作者：Wang Chao hong^*; Kuo Chun yi

来源：Materials Chemistry and Physics, 2015, 153: 72-77.

DOI：10.1016/j.matchemphys.2014.12.036

• Interfaces
• Intermetallic compounds
• Diffusion
• Thermoelectric effects

Interfacial reactions in Sn/Co/Sn couples with different lengths of Co substrate (100 mu m-2000 mu m) were examined under current stressing of 5000 A/cm(2). Uniform CoSn3 layers were formed at both interfaces. Notably, the CoSn3 layer at the Sn/Co cathode side was thinner than that of the Co/Sn anode side. Moreover, with the increase of substrate length, the thickness difference increased. This strong asymmetric CoSn3 growth was attributed to the Peltier effect, rather than electromigration. For the Sn/Co(2000 mu m)/Sn case, the temperature difference was as high as similar to 14 degrees C, resulting in that the growth rates significantly differed at both interfaces. Additionally, the simulation model was developed to calculate the temperature difference. The agreement of calculated and experimental values appears to be very well. Furthermore, the Peltier effect on the couples of Sn with Cu and Ni substrates was also studied. Thin Co layers (5 mu m) were deposited on the Cu or Ni substrate as temperature indicator. The Peltier effect was negligible in the Sn/Cu system, while the temperature difference in the Sn/Ni system was considerable, about 60% of the Sn/Co system.

• 出版日期2015-3-1