Deoxidation of (001) III-V semiconductors in metal-organic vapour phase epitaxy

作者：Kaspari Christian; Pristovsek Markus^*; Richter Wolfgang

来源：Journal of Applied Physics, 2016, 120(8): 085701.

DOI：10.1063/1.4961414

We studied the deoxidation of several (001) III-V semiconductors in metal-organic vapour phase epitaxy using in-situ reflectance anisotropy spectroscopy and in-situ spectroscopic ellipsometry. The oxide desorption started as soon as k(B)T reaches 1/15th of the bond strength of the crystal if there is hydrogen or group V precursor present. The oxide thickness decreases first and afterwards the surface slowly reconstructs. At a constant temperature the oxide thickness decreased according to a second order reaction. We found two processes on InAs and GaAs, but only a single one on InP. The activation energy for the removal of epi-ready oxide under group V flux was 0.64 eV, 1.1 eV, and 1.3 eV on InAs, GaAs, and InP, respectively. The end of oxide desorption is determined by the removal of the last metal rich oxides, at temperatures of 500 degrees C for InAs/InP and 600 degrees C for GaAs/GaP. Published by AIP Publishing.

• 出版日期2016-8-28