Novel Low-Power and Highly Reliable Radiation Hardened Memory Cell for 65 nm CMOS Technology

作者：Guo Jing^*; Xiao Liyi; Mao Zhigang

来源：IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2014, 61(7): 1994-2001.

DOI：10.1109/TCSI.2014.2304658

• Critical charge
• radiation hardened memory
• reliability
• single event upsets (SEUs)
• soft errors

In this paper, a novel low-power and highly reliable radiation hardened memory cell (RHM-12T) using 12 transistors is proposed to provide enough immunity against single event upset in TSMC 65 nm CMOS technology. The obtained results show that the proposed cell can not only tolerate upset at its any sensitive node regardless of upset polarity and strength, but also recover from multiple-node upset induced by charge sharing on the fixed nodes independent of the stored value. Moreover, the proposed cell has comparable or lower overheads in terms of static power, area and access time compared with previous radiation hardened memory cells.

• 出版日期2014-7
• 单位哈尔滨工业大学