Air-stable n-channel organic field-effect transistors based on a sulfur rich pi-electron acceptor

作者：Filatre Furcate Agathe; Higashino Toshiki^*; Lorcy Dominique; Mori Takehiko

来源：Journal of Materials Chemistry C, 2015, 3(15): 3569-3573.

DOI：10.1039/c5tc00253b

Thin-film and single-crystal n-channel organic field-effect transistors are built from the sulfur rich pi-electron acceptor, (E)-3,3'-diethyl-5,5'-bithiazolidinylidene-2,4,2',4'-tetrathione (DEBTTT). Different source and drain electrode materials are investigated: gold, the conducting charge transfer salt (tetrathiafulvalene)( tetracyanoquinodimethane), and carbon paste. Regardless of the nature of the electrodes, air-stable n-channel transistors have been obtained. Single crystals exhibit a higher performance than the thin-film transistors with a mobility of up to 0.22 cm(2) V-1 s(-1). These thin-film and single-crystal devices exhibit excellent long-term stability as demonstrated by the mobility measured during several weeks. The high mobility and air stability are ascribed to the characteristic three-dimensional S-S network coming from the thioketone sulfur atoms.

• 出版日期2015