A fully integrated CMOS active bandpass filter for multiband RF front-ends

作者：Gao Zhiqiang^*; Ma Jianguo; Yu Mingyan; Ye Yizheng

来源：IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2008, 55(8): 718-722.

DOI：10.1109/TCSII.2008.922392

• active bandpass filters
• active inductors
• multiband RF front-ends
• Q-enhancement
• stability

In this paper, design techniques for an integrated RF bandpass filter are discussed. A novel wide-tuning high-Q active bandpass filter utilizing the active inductors is presented. Issues of the active inductor related to Q-enhancement, noise, linearity, and stability are considered. The circuit has been fabricated in an 0.18-mu m CMOS process, and the filter occupies the active area of 150 x 200 mu m(2). Measurement results show that the filter centered at 3.82 GHz with about 36-MHz bandwidth (3-dB) is tunable in frequency from about 1.92 to 3.82 GHz, and it exhibits -15- to 1-dB compression point at 2.44 GHz with approximately 60-MHz bandwidth while the de power consumes 10.8 mW.

• 出版日期2008-8
• 单位哈尔滨工业大学