Design and Simulation of FeFET-Based Lookup Table

作者：Li, Kai; Xiong, Ying; Tang, Minghua^*; Qin, Ya; Li, Zheng; Zhou, Yichun

来源：Integrated Ferroelectrics, 2015, 167(1): 62-68.

DOI：10.1080/10584587.2015.1105706

• Ferroelectric random access memory
• ferroelectric gate field effect transistor
• lookup table
• simulation

Ferroelectric random access memory (FeRAM) is a promising candidate to substitute static random access memory (SRAM) in lookup table (LUT) design due to its high density, high speed operation, anti-radiation and non-volatility. Ferroelectric gate field effect transistors (FeFETs) have been extensively studied and its usage in memory elements and basic analog circuit configurations has gained much interests. Here, we propose a novel architecture of FeFET-based LUT. An improved timing mode of FeRAM chip is analyzed to satisfy the performance of the FeFET-based LUT. Decoder, driver circuit and sensitive amplifier for FeFET array are also proposed. All the simulation results show that the proposed LUT works properly when the frequency reaches 500 MHz at 0.3V differential input signal.

• 出版日期2015-11-22
• 单位湘潭大学