Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor

作者：Jang Young In^*; Seo Jae Hwa; Yoon Young Jun; Eun Hye Rim; Kwon Ra Hee; Lee Jung Hee; Kwon Hyuck In; Kang In Man

来源：Journal of Semiconductor Technology and Science, 2015, 15(5): 554-562.

DOI：10.5573/JSTS.2015.15.5.554

• AlGaN/GaN
• recessed gate
• fin-type field-effect transistor (FinFET)
• 3-D TCAD

This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width (W-fin) and the height of GaN layer (H-GaN) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/ GaN FinFET.

• 出版日期2015-10