Depth analysis of boron diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy

作者：Lu Y^*; Lepine B; Jezequel G; Ababou S; Alnot M; Lambert J; Renard A; Mullet M; Deranlot C; Jaffres H; Petroff F; George J M

来源：Journal of Applied Physics, 2010, 108(4): 043703.

DOI：10.1063/1.3465308

We have studied the boron (B) diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy depth analysis. A large concentration of B (B/Mg=0.16) was found to diffuse into the MgO barrier after 350 degrees C annealing. The boron in MgO is in a highly oxidized B(3+) state and is homogenously distributed in the whole barrier. The important B diffusion in MgO could be related to the CoFeB crystallization process which begins from the under CoFeB/Ru interface and pushes boron atoms to diffuse into the MgO barrier during annealing.

• 出版日期2010-8-15