Preparation of c-axis-oriented Bi4Ti3O12 thick films by templated grain growth

作者：Xiang Ping Hua; Kinemuchi Yoshiaki^*; Watari Koji

来源：Journal of the European Ceramic Society, 2007, 27(2-3): 663-667.

DOI：10.1016/j.jeurceramsoc.2006.04.047

• bismuth titanate
• dielectric properties
• microstructure

Highly c-axis-oriented Bi4Ti3O12 thick films were successfully fabricated by templated grain growth. The effects of template particles and sintering conditions on grain orientation in thick films were investigated. SEM micrographs and X-ray diffraction (XRD) patterns exhibited that thick films were c-axis-oriented. The degree of grain orientation (Lotgering factor, f) increases with increasing sintering temperature and soaking time. Highly c-axis-oriented thick film (orientation degree of similar to 0.98) is obtained with the use of only 5 wt.% template particles by sintering at 1000 degrees C for 2 h. This film exhibits a better temperature-independent dielectric constant and a lower dielectric loss.

• 出版日期2007