Negative effect of Au nanoparticles on an IGZO TFT-based nonvolatile memory device

作者：Lim Myung Hoon^*; Yoo Gwangwe; Lee Jongtaek; Jeong Seok Won; Roh Yonghan; Park Jin Hong; Kwon Namyong; Jung Woo Shik

来源：Journal of the Korean Physical Society, 2014, 64(3): 337-340.

DOI：10.3938/jkps.64.337

• Au NPs
• IGZO
• Memory

In this letter, the electrical characteristics of nonvolatile memory devices based on back gatetype indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are investigated in terms of the Au nanoparticles (NPs) employed in the floating gate-stack of the device. The size of the Au NPs is controlled using a by 500 A degrees C annealing process after the Au thin-film deposition. The size and the roughness of the Au NPs were observed by using scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. In order to analyze the electrical properties according to Au NP size, we measured the current-voltage (I (D) -V (G) ) characteristics of the nonvolatile memory devices fabricated without Au NPs and with Au NPs of various sizes. The size of the Au NP increased, so did the surface roughness of the gate. This resulted in increased carrier scattering, which subsequently degraded the on-current of the memory device. In addition, inter-diffusion between the Au and the alpha-IGZO through the non-uniform Al2O3 tunneling layer seemed to further degrade the device performance.

• 出版日期2014-2